Browsing by Subject "Gallium arsenide semiconductors"
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Characterization of gallium arsenide nitride and indium gallium arsenide nitride novel semiconductors (Texas Tech University, 1999-05)In this thesis, important properties of gallium arsenide nitride (GaAsN) and indium gallium arsenide nitride (InGaAsN) novel semiconductors are presented. Using several experimental techniques such as x-ray diffraction, ...
(Texas Tech University, 1985-05)Not available
(Texas Tech University, 1999-08)Optical measurements, mainly Raman spectroscopy, are used to study GaAs heavily doped with carbon. Hole concentration in these samples ranges from 2.3 x 10 to 1x10 cm^20^-3. Three main Raman features are investigated: the ...
(Texas Tech University, 1993-12)The symmetry and thermal activation energy of a dominant defect center in n-type liquid encapsulated Czochralski grown gallium arsenide (GaAs) crystal, called EL2, is investigated experimentally by the deep level transient ...