Deep level transient spectroscopy and uniaxial stress system
Date
1990-12
Authors
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Publisher
Texas Tech University
Abstract
Deep level transient spectroscopy (DLTS) combined with uniaxial stress will not only determine the energy level of a defect center in semiconductor but also tell its symmetry, which is very important for identifying the structure of a defect center. As a thesis for my Master's of Science Degree, this report explains the theories of DLTS and uniaxial stress, our experimental system and some initial results obtained from this system.
Description
Keywords
Level-crossing spectroscopy, Semiconductors -- Defects