Diamond-like carbon films made by sputtering and PECVD
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This thesis describes the work on a-C:H thin films, including their preparation and characterization. It begins with introducing seme basic concepts such as sp1, sp2, sp3, their electronic structure, diamond-like carbon, and their applications to antifuse devices. Then, in Chapter II, film deposition techniques and characterization methods are presented in detail. The techniques of deposition consist of radio-frequency sputtering (r.f sputtering) and plasma-enhanced chemical vapor deposition (PECVD) systems. The methods of characterization are composed of optical absorption used to determine the band gap Eg, and infrared spectroscopy used to study C-C and CH bonding structures. Hew to measure self-biases and how to apply biases on anode are also contained in this chapter. In Chapter HI, the results of a-C:H films prepared by both r.f sputtering and PECVD are listed and discussed. Their growth rate, band gap and concentration of hydrogen are calculated and studied. They change with pressure and power in the same way as we expect according to theory. For instance, the concentration of hydrogen decreases with increasing power since higher power can cause mere removal of hydrogen from the film. Finally, conclusions are made, and future research directions are mentioned. Based en our good and believable results, a-C:H is considered to be a premising material to be used in wide applications.