• Deep Ultraviolet Light Emitting Diodes Based on Short Period Superlattices of AlN/AlGa(In)N 

  Temkin, H.; Holtz, M.; Ahmad, I.; Kipshidze, G.; Borisov, B.; Chandolu, A.; Kuryatkov, V.; Nikishin, S. (The Japan Society of Applied Physics, 2003-11-15)

  We report a systematic study of the optical properties of superlattices of AlN/Al0:08Ga0:92(In)N with periods in the range of 1.25–2.25 nm. The superlattices were grown on sapphire substrates using gas source molecular ...

• Structural properties of fluorinated amorphous carbon films 

  West, M.; Startham, M.; Gangopadhyay, S.; Temkin, H.; Bouldin, K.; Harris, H.; Wang, X. (American Institute of Physics, 2001-01-01)

  Fluorinated amorphous carbon films have been deposited in a plasma-enhanced chemical vapor deposition system, and the optical properties examined by Fourier transform infrared and ultraviolet-visible absorption spectroscopy. ...

• Electrical properties of fluorinated amorphous carbon films 

  Gangopadhyay, S.; Temkin, H.; Celebi, G.; Wang, X.; Harris, H.; Biswas, N. (American Institute of Physics, 2001-04-15)

  We have studied the capacitance–voltage (C–V), conductance–voltage (G–V), and current– voltage characteristics of fluorinated amorphous carbon (a-C:Fx) films using metal/a-C:Fx /Si and metal/a-C:Fx /metal structures, ...

• Determination of oscillator strength of C–F vibrations in fluorinated 

  West, M.; Strathman, M.; Gangopadhyey, S.; Temkin, H.; Harris, H.; Wang, X. (American Institute of Physics, 2001-05-01)

  Fluorinated amorphous-carbon (a-CFx) films deposited by plasma-enhanced chemical-vapor deposition were investigated by Fourier transform infrared transmission spectroscopy and Rutherford backscattering. The proportionality ...

• Plasma enhanced metalorganic chemical vapor deposition of amorphous 

  Strathman, M.; Gangopadhyay, S.; Temkin, H.; Biswas, N.; Harris, H. (American Institute of Physics, 2001-12-01)

  Plasma enhanced deposition of amorphous aluminum nitride ~AlN! using trimethylaluminum, hydrogen, and nitrogen was performed in a capacitively coupled plasma system. Temperature was varied from 350 to 550 °C, and pressure ...

• DIELECTRIC FUNCTION OF AlN GROWN ON Si (111) BY MBE 

  Temkin, H.; Nikishin, S.; Wilson, S.; Gregory, R.; Konkar, A.; Zollner, Stefan (Materials Research Society, 2000)

  We measured the ellipsometric response from 0.7-5.4 eV of c-axis oriented AlN on Si (111) grown by molecular beam epitaxy. We determine the film thicknesses and find that for our AlN the refractive index is about 5-10% ...

• Visible and ultraviolet Raman scattering studies of Si1ÀxGex alloys 

  Liu, R.; Zollner, S.; Duncan, W.; Holtz, M. (American Institute of Phsyics, 2000-09)

  We report Raman studies of the Si–Si phonon band in Si12xGex alloys, where the excitation is by visible and ultraviolet ~351 nm! light. At a wavelength 351 nm, the optical penetration depth is extremely shallow ~'5 nm!. ...

• Selective growth of high quality GaN on Si 111 substrates 

  Temkin, H.; Faleev, N.; Nikishin, S.; Holtz, M.; Prokofyeva, T.; Seon, M. (American Institute of Physics, 2000-04-03)

  We demonstrate selective growth of high-quality GaN by gas-source molecular beam epitaxy on Si~111! wafers patterned with SiO2. GaN was grown on wafers having two different buffer layers. The first buffer layer contains ...

• HfO2 gate dielectric with 0.5 nm equivalent oxide thickness 

  Temkin, H.; Gangopadhyay, S.; Nikishin, S.; Kipshidze, G.; Biswas, N.; Chandolu, A.; Mehta, N.; Choi, K.; Harris, H. (American Institute of Physics, 2002-08-05)

  Hafnium dioxide films have been deposited using reactive electron beam evaporation in oxygen on hydrogenated Si(100) surfaces. The capacitance–voltage curves of as-deposited metal(Ti)–insulator–semiconductor structures ...

• Vibrational properties of AlN grown on 111 -oriented siliconPHYSICAL REVIEW B, VOLUME 63, 125313 

  Zollner, S.; Temkin, H.; Faleev, N.; Nikishin, S.; Holtz, Mark; Vanbuskirk, J.; Seon, M.; Prokofyeva, T. (American Physical Society, 2001)

  We study the vibrational spectrum of AlN grown on Si~111!. The AlN was deposited using gas-source molecular beam epitaxy. Raman backscattering along the growth c axis and from a cleaved surface perpendicular to the wurtzite ...

• AlGaInN-based ultraviolet light-emitting diodes grown on Si 111 

  Temkin, H.; Nikishin, S.; Holtz, M.; Borisov, B.; Kuryatkov, V.; Kipshidze, G. (American Institute of Physics, 2002-05-20)

  Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type ...

• Plasma etching of AlNÕAlGaInN superlattices for device fabrication 

  Holtz, Mark; Temkin, H.; Nikishin, S.; Kipshidze, G.; Borisov, B.; Kuryatkov, V.; Zhu, K. (American Institute of Physics, 2002)

  We report a study of plasma etching of GaN, AlN, and AlN/AlGaN superlattices for the processing of deep ultraviolet light emitting diodes. Etching was carried out using inductively coupled plasma of chlorine diluted with ...

• Deep Ultraviolet AlGaInN-Based Light-Emitting Diodes 

  Temkin, H.; Chu, S.; Holtz, M.; Nikishin, S.; Borisov, B.; Kuryatkov, V.; Kipshidze, G. (Wiley, 2002)

  Ultraviolet light-emitting diodes (LEDs) with emission wavelength as short as 280 nm, grown by gas source molecular beam epitaxy with ammonia, are described. The typical multi-quantum well (MQW) structure LED consists of ...

• Optical properties of GaN grown on Si 111 by gas source molecular beam 

  Holtz, M.; Prokofyeva, T.; Temkin, H.; Kuryatkov, V.; Kipshidze, G.; Nikishin, S.; Zubrilov, A. (American Institute of Physics, 2002-02-01)

  We report a study of the optical properties of GaN grown on Si~111! by gas source molecular beam epitaxy with ammonia. Temperature dependence of edge luminescence was studied in the range of 77–495 K for samples with low ...

• Effects of power truncation on the insertion loss and crosstalk 

  Temkin, H.; Frisbie, S.; Grave de Peralta, Luis; Bernussi, A. (American Institute of Physics, 2003-09)

  A measurement of the insertion loss and crosstalk in folded, 100 GHz, arrayed waveguide multiplexers as a function of the number of grating waveguides is described. The number of grating waveguides can be varied in a single ...

• Reflective Arrayed Waveguide Grating Multiplexer 

  Temkin, H.; Gale, R.; Frisbie, S.; Bernussi, A.; Grave de Peralta, Luis (IEEE, 2003-10)

  High-performance reflective arrayed waveguide grating multiplexer/demultiplexer designed for compatibility with silicon integrated circuit processing is described. The grating, folded by a flat reflecting surface, can be ...

• Silicon-Dioxide Waveguides With Low Birefringence 

  Doucette, David; Borhani, Marcus; Temkin, H.; Bernussi, Ayerton; Grave de Peralta, L. (IEEE, 2003-07)

  We describe the use of highly boron-doped silicon dioxide for the preparation of optical waveguides with very low birefringence. Plasma-enhanced chemical vapor deposition was used to vary the boron content from 5 wt% to ...

• Influence of nanocrystal growth kinetics on interface roughness 

  Temkin, H.; Yun, J.; Chandolu, A.; Berg, J.; Daugherty, M.; Holtz, M.; Aurongzeb, D. (American Institute of Physics, 2003-12-29)

  We study the layer morphology of Ni/Al multilayer structures, with 50 nm period, as deposited and following 10 min anneals up through the melting temperature of Al. X-ray reflectivity measurement of the as-deposited film ...

• Microfabrication and Characterization of Teflon AF-Coated Liquid Core Waveguide Channels in Silicon 

  Dasgupta, P.; Temkin, H.; Holtz, M.; Dallas, T.; Gangopadhyay, S.; Ahmad, I.; Manor, R.; Kuban, P.; Dhar, A.; Eom, I.; Datta, A. (Institute of Elecrtonics and Electrical Engineers., 2003-12-06)

  The fabrication and testing of Teflon AF-coated channels on silicon and bonding of the same to a similarly coated glass wafer are described.With water or aqueous solutions in such channels, the channels exhibit much better ...

• AlNÕAlGaInN superlattice light-emitting diodes at 280 nm 

  Temkin, H.; Nikishin, S.; Holtz, M.; Borisov, B.; Zhu, K.; Kuryatkov, V.; Kipshidze, G. (American Institute of Physics, 2003-02-01)

  Ultraviolet light-emitting diodes operating at 280 nm, grown by gas source molecular-beam epitaxy with ammonia, are described. The device is composed of n- and p-type superlattices of AlN~1.2 nm thick!/AlGaInN~0.5 nm thick! ...

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