Now showing items 1-3 of 3
Selective growth of high quality GaN on Si 111 substrates
(American Institute of Physics, 2000-04-03)
We demonstrate selective growth of high-quality GaN by gas-source molecular beam epitaxy on Si~111! wafers patterned with SiO2. GaN was grown on wafers having two different buffer layers. The first buffer layer contains ...
Visible and ultraviolet Raman scattering studies of Si1ÀxGex alloys
(American Institute of Phsyics, 2000-09)
We report Raman studies of the Si–Si phonon band in Si12xGex alloys, where the excitation is by visible and ultraviolet ~351 nm! light. At a wavelength 351 nm, the optical penetration depth is extremely shallow ~'5 nm!. ...
DIELECTRIC FUNCTION OF AlN GROWN ON Si (111) BY MBE
(Materials Research Society, 2000)
We measured the ellipsometric response from 0.7-5.4 eV of c-axis oriented AlN on Si (111) grown by molecular beam epitaxy. We determine the film thicknesses and find that for our AlN the refractive index is about 5-10% ...