Now showing items 1-5 of 5
HfO2 gate dielectric with 0.5 nm equivalent oxide thickness
(American Institute of Physics, 2002-08-05)
Hafnium dioxide films have been deposited using reactive electron beam evaporation in oxygen on hydrogenated Si(100) surfaces. The capacitance–voltage curves of as-deposited metal(Ti)–insulator–semiconductor structures ...
Plasma etching of AlNÕAlGaInN superlattices for device fabrication
(American Institute of Physics, 2002)
We report a study of plasma etching of GaN, AlN, and AlN/AlGaN superlattices for the processing of deep ultraviolet light emitting diodes. Etching was carried out using inductively coupled plasma of chlorine diluted with ...
AlGaInN-based ultraviolet light-emitting diodes grown on Si 111
(American Institute of Physics, 2002-05-20)
Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type ...
Optical properties of GaN grown on Si 111 by gas source molecular beam
(American Institute of Physics, 2002-02-01)
We report a study of the optical properties of GaN grown on Si~111! by gas source molecular beam epitaxy with ammonia. Temperature dependence of edge luminescence was studied in the range of 77–495 K for samples with low ...
Deep Ultraviolet AlGaInN-Based Light-Emitting Diodes
Ultraviolet light-emitting diodes (LEDs) with emission wavelength as short as 280 nm, grown by gas source molecular beam epitaxy with ammonia, are described. The typical multi-quantum well (MQW) structure LED consists of ...