• III-Nitride Blue and Ultraviolet Photonic Crystal Light Emitting Diodes 

  Jiang, H.X.; Lin, J.Y.; Kim, K.H.; Oder, T.N. (American Institute of Physics, 2004-01-26)

• Electroluminescent Properties of Erbium-Doped III-N Light-Emitting Diodes 

  Hertog, B.; Chow, P.; Jiang, H.X.; Lin, J.Y.; Nepal, N.; Jin, S.X.; Zavada, J.M. (American Institute of Physics, 2004-02-16)

• Optical Properties of the Nitrogen Vacancy in AlN Epilayers 

  Wilson, R.G.; Zavada, J.M.; Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Nam, K.B.; Nepal, N. (American Institute of Physics, 2004-02-16)

• Mechanism of Enhanced Luminescence in In_x_Al_y_Ga_1-x-y_N Quaternary Epilayers 

  Lin, J.Y.; Jiang, H.X.; Chen, K.H.; Chen, L.C.; Lan, Z.H.; Chen, Y.F.; Chen, C.H. (American Institute of Physics, 2004-03-01)

• Unique Optical Properties of AlGaN Alloys and Related Ultraviolet Emitters 

  Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Li, J.; Nam, K.B. (American Institute of Physics, 2004-06-21)

• Enhanced Light Extraction in III-Nitride Ultraviolet Photonic Crystal Light Emitting Diodes 

  Jiang, H.X.; Lin, J.Y.; Kim, K.H.; Shakya, J. (American Institute of Physics, 2004-07-05)

• Time-Resolved Electroluminescence Studies of III-Nitride Ultraviolet Photonic-Crystal Light-Emitting Diodes 

  Jiang, H.X.; Lin, J.Y.; Shakya, J. (American Institute of Physics, 2004-09-13)

• Acceptor-Bound Exciton Transition in Mg-Doped AlN Epilayers 

  Jiang, H.X.; Lin, J.Y.; Nam, K.B.; Nakarmi, M.L.; Nepal, N. (American Institute of Physics, 2004-09-20)

• Optical Properties of AlN and GaN in Elevated Temperatures 

  Jiang, H.X.; Lin, J.Y.; Li, J.; Nam, K.B. (American Institute of Physics, 2004-10-18)

• Transport Properties of Highly Conductive N-type Al-rich Al_x_Ga_1-x_N (x>=0.7) 

  Jiang, H.X.; Lin, J.Y.; Zhu, K.; Kim, K.H.; Nakarmi, M.L. (American Institute of Physics, 2004-10-25)

• Band-Edge Exciton States in AlN Single Crystals and Epitaxial Layers 

  Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Khan, M.A.; Yang, J.; Sun, W.; Chen, C.; Sitar, Z.; Schlesser, R.; Dalmau, R.F.; Skromme, B.J.; Chen, L. (American Institute of Physics, 2004-11-08)

• Mg Doped Al-Rich AlGaN Alloys for Deep UV Emitters 

  Jiang, H.X.; Lin, J.Y.; Zhu, K.; Kim, K.H.; Nakarmi, M.L. (SPIE, 2004)

• III-Nitride Blue and UV Photonic Crystal Light-Emitting Diodes 

  Jiang, H.X.; Lin, J.Y.; Oder, T.N.; Kim, K.H.; Shakya, J. (SPIE, 2004)

• Silicon Doping Dependence of Highly Conductive N-type Al_0.7_Ga_0.3_N 

  Jiang, H.X.; Lin, J.Y.; Kim, K.H.; Nakarmi, M.L.; Zhu, K. (American Institute of Physics, 2004-11-15)

• AlGaN-Based Ultraviolet Light-Emitting Diodes Grown on AlN Epilayers 

  Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Khizar, M.L.; Fan, Z.Y.; Kim, K.H. (American Institute of Physics, 2004-11-15)

• Electrical and Optical Porperties of Mg-Doped Al_.7_Ga_.3_N Alloys 

  Jiang, H.X.; Lin, J.Y.; Fan, Z.Y.; Khizar, M.; Kim, K.H.; Nakarmi, M.L. (American Institute of Physics, 2005-02-25)

• Polarization of III-Nitride Blue and Ultraviolet Light-Emitting Diodes 

  Jiang, H.X.; Lin, J.Y.; Li, J.; Kim, K.H.; Knabe, K.; Shakya, J. (American Institute of Physics, 2005-02-25)

• Nitride Deep-Ultraviolet Light-Emitting Diodes with Microlens Array 

  Jiang, H.X.; Lin, J.Y.; Kim, K.H.; Fan, Z.Y.; Khizar, M. (American Institute of Physics, 2005-04-18)

• Deep Impurity Transitions Involving Cation Vacancies and Complexs in AlGaN Alloys 

  Jiang, H.; Lin, J.Y.; Nakarmi, M.L.; Nam, K.B. (American Institute of Physics, 2005-05-26)

• Unintentionally Doped N-Type Al_.67_Ga_.33_N Epilayers 

  Jiang, H.X.; Lin, J.Y.; Nepal, N.; Nakarmi, M.L. (American Institute of Physics, 2005-06-20)

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