Browsing Center for Nanophotonics by Title

1.54 Micrometer Emitter and Optical Amplifier Based on Er Doped InGaN/GaN

Zavada, J. M.; Jiang, H.X.; Lin, J.Y.; Dahal, R. (The International Society for Optics and Photonics, 2010)

1.54 Micrometer Emitters Based on Erbium Doped InGaN P-I-N Junctions

Zavada, J. M.; Jiang, H. X.; Lin, J. Y.; Ugolini, C.; Dahal, R. (American Institute of Physics, 2010)

200 Nanometer Deep Ultraviolet Photodetectors basen on AlN

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Dahal, R.; Fan, Z.Y.; Li, J, (2011-07-12)

Acceptor-Bound Exciton Transition in Mg-Doped AlN Epilayers

Jiang, H.X.; Lin, J.Y.; Nam, K.B.; Nakarmi, M.L.; Nepal, N. (American Institute of Physics, 2004-09-20)

Achieving P-In_x_Ga_1-x_N Alloys with High In Contents

Jiang, H.X.; Lin, J.Y.; Li, J.; Sedhain, A.; Pantha, B.N. (The International Society for Optics and Photonics, 2010)

AlGaN-Based Ultraviolet Light-Emitting Diodes Grown on AlN Epilayers

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Khizar, M.L.; Fan, Z.Y.; Kim, K.H. (American Institute of Physics, 2004-11-15)

AlGaN/GaN/AlN Quantum-Well Field-Effect Transistors with Highly Resistive AlN Epilayers

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Li, J.; Fan, Z.Y. (American Institute of Physics, 2006-02-16)

AlN Avalanche Photodetectors

Jiang, H.X.; Lin, J.Y.; Al Tahtamouni, T.M.; Dahal, R. (American Institute of Physics, 2007-12-10)

Band-Edge Exciton States in AlN Single Crystals and Epitaxial Layers

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Khan, M.A.; Yang, J.; Sun, W.; Chen, C.; Sitar, Z.; Schlesser, R.; Dalmau, R.F.; Skromme, B.J.; Chen, L. (American Institute of Physics, 2004-11-08)

Beryllium Acceptor Binding Energy in AlN

Jiang, H.X.; Lin, J.Y.; Li, J.; Tahtamouni, T.M. Al; Sedhain, A. (American Institute of Physics, 2008-10-07)

Carrier Lifetime in Erbium-Doped GaN Waveguide Emitting in 1540 nm Wavelength

Jiang, H. X.; Lin, J. Y.; Dahal, R.; Hui, R.; Wang, Q. (American Institute of Physics, 2010-12-16)

Characterization of AlN Metal-Semiconductor-Metal Diodes in the Spectral Range of 44-360 Nanometer: Photoemission Assessments

Richter, M.; Kroth, U.; De Jaeger, J.C.; Soltani, A.; Jiang, H.X.; Lin, J.Y.; Li, J.; Dahal, R.; Hochedez, J.F.; BenMoussa, A. (American Institute of Physics, 2008-01-15)

Comment on "Spectral Identification of Thin Film Coated and Sold Form Semiconductor Neutron Detectors" by McGregor and Shultis

Dowben, P.A.; Robertson, B.W.; Pitts, W.K.; McIlroy, D.N.; Lundstedt, C.; Losovyj, Ya.B.; Lin, J.Y.; Jiang, H.X.; Dongjin, Byun; Brand, J.; Adenwalla, S.; Caruso, A.N.; Hallbeck, S. (Elsevier B.V., 2004-09-11)