Low-Resistance Ohmic Contacts to Digital
Date
2006-01
Authors
Temkin, H.
Nikishin, S.
Kipshidze, G.
Borisov, B.
Kuryatkov, V.
Mathur, K.
Choi, K.
Yun, J.
Journal Title
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Volume Title
Publisher
Institute of Electrical and Electronics Engineers
Abstract
Low contact resistance to digital alloys of n-type AlGaN/AlN with high average Al concentration is described. Low-energy electron diffraction was used to evaluate surface precleaning with HCl and buffered HF. The contact metallization consisting of a stack of Ti/Al/Ti/Au, 20/100/45/60 nm in thickness, was e-beam deposited and etch-patterned. The lowest specific contact resistance of 5.6×10-5 Ω·cm2 was obtained after annealing in N2 ambient at 700°C
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Citation
Yun, J.; Choi, K.; Mathur, K.; Kuryatkov, V.; Borisov, B.; Kipshidze, G.; Nikishin, S.; Temkin, H.; , "Low-resistance Ohmic contacts to digital alloys of n-AlGaN/AlN," Electron Device Letters, IEEE , vol.27, no.1, pp. 22- 24, Jan. 2006