247 nm solar-blind ultraviolet p-i-n photodetector

Date

2006-11-06

Authors

Holtz, Mark
Song, D.Y.
Sokolovskii, G.
Kuchinskii, V.
Asomoza, R.
Kudryavtsev, Yu.
Nikishin, S.
Borisov, B.A.
Kuryatkov, V.

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics

Abstract

We describe solar-blind p-i-n photodetectors based on short period superlattices of AlN/Al0.08Ga0.92N. The devices are grown using gas source molecular beam epitaxy with ammonia on transparent sapphire substrates. The cutoff wavelength for the device is 247 nm. For diodes with 150 m diameter mesas and sidewall surfaces passivated in oxygen plasma, we obtain extremely low dark leakage current of 3 pA/cm2 and high zero-bias resistance of 6 1014 . At 10 V reverse bias the observed responsivity is 62 mA/W.

Description

Keywords

Citation

247 nm solar-blind ultraviolet p-i-n photodetector

Collections