Show simple item record

dc.contributor.authorHoltz, Marken_US
dc.contributor.authorSong, D.Y.en_US
dc.contributor.authorSokolovskii, G.en_US
dc.contributor.authorKuchinskii, V.en_US
dc.contributor.authorAsomoza, R.en_US
dc.contributor.authorKudryavtsev, Yu.en_US
dc.contributor.authorNikishin, S.en_US
dc.contributor.authorBorisov, B.A.en_US
dc.contributor.authorKuryatkov, V.en_US
dc.date.accessioned2010-10-06T19:52:31Zen_US
dc.date.accessioned2012-05-13T17:30:45Z
dc.date.available2010-10-06T19:52:31Zen_US
dc.date.available2012-05-13T17:30:45Z
dc.date.issued2006-11-06en_US
dc.identifier.citation247 nm solar-blind ultraviolet p-i-n photodetectoren
dc.identifier.urihttp://hdl.handle.net/2346/2043en_US
dc.description.abstractWe describe solar-blind p-i-n photodetectors based on short period superlattices of AlN/Al0.08Ga0.92N. The devices are grown using gas source molecular beam epitaxy with ammonia on transparent sapphire substrates. The cutoff wavelength for the device is 247 nm. For diodes with 150 m diameter mesas and sidewall surfaces passivated in oxygen plasma, we obtain extremely low dark leakage current of 3 pA/cm2 and high zero-bias resistance of 6 1014 . At 10 V reverse bias the observed responsivity is 62 mA/W.en
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.relation.ispartofseries100;096104en_US
dc.title247 nm solar-blind ultraviolet p-i-n photodetectoren
dc.typeArticleen
ttu.departmentNano Tech Center (NTC)en
ttu.emailmark.holtz@ttu.eduen


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record