Short-period superlattices of AlN/Al0.08Ga0.92N grown on AlN substrates

Date

2004-11-08

Authors

Helava, H.
Makarov, Yu.
Mokhov, E.
Temkin, H.
Kuryatkov, V.
Chandolu, A.
Borisov, B.
Nikishin, S.

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics

Abstract

High-quality short-period superlattices of AlN/Al0.08Ga0.92N have been grown by gas-source molecular-beam epitaxy with ammonia on Al face of AlN (0001) substrates. A significant reduction was achieved in the dislocation density, down to 33108 cm−2. Complete removal of residual Al2O3 surface oxide is needed in order to obtain low dislocation density in homoepitaxy on AlN. We show that the presence of Al2O3 islands with the surface coverage as low as 0.2% results in increased dislocation density.

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Citation

Short-period superlattices of AlN/Al[sub 0.08]Ga[sub 0.92]N grown on AlN substrates S. A. Nikishin, B. A. Borisov, A. Chandolu, V. V. Kuryatkov, H. Temkin, M. Holtz, E. N. Mokhov, Yu. Makarov, and H. Helava, Appl. Phys. Lett. 85, 4355 (2004), DOI:10.1063/1.1815056

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