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dc.contributor.authorJiang, H. X.en_US
dc.contributor.authorLin, J. Y.en_US
dc.contributor.authorDahal, R.en_US
dc.contributor.authorHui, R.en_US
dc.contributor.authorWang, Q.en_US
dc.date.accessioned2011-06-30T19:35:22Zen_US
dc.date.accessioned2012-05-03T19:45:48Z
dc.date.available2011-06-30T19:35:22Zen_US
dc.date.available2012-05-03T19:45:48Z
dc.date.issued2010-12-16en_US
dc.identifier.urihttp://hdl.handle.net/2346/22869en_US
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.relation.ispartofseriesCenter for Nanophotonics;97-241105en_US
dc.titleCarrier Lifetime in Erbium-Doped GaN Waveguide Emitting in 1540 nm Wavelengthen
dc.title.alternativeApplied Physics Letters 97, 241105en
dc.typeArticleen
ttu.departmentCenter for Nanophotonicsen
ttu.emailrajendra.dahal@ttu.eduen
ttu.emailjingyu.lin@ttu.eduen
ttu.emailhx.jiang@ttu.eduen


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