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1.54 Micrometer Emitters Based on Erbium Doped InGaN P-I-N Junctions
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Date
2010
Author
Zavada, J. M.
Jiang, H. X.
Lin, J. Y.
Ugolini, C.
Dahal, R.
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URI
http://hdl.handle.net/2346/22870
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