1.54 Micrometer Emitters Based on Erbium Doped InGaN P-I-N Junctions

Date

2010

Authors

Zavada, J. M.
Jiang, H. X.
Lin, J. Y.
Ugolini, C.
Dahal, R.

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics

Abstract

Description

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