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dc.contributor.authorZavada, J.en_US
dc.contributor.authorJiang, H.X.en_US
dc.contributor.authorLin, J. Y.en_US
dc.contributor.authorSedhain, A.en_US
dc.contributor.authorLi, J.en_US
dc.contributor.authorFeng, I.W.en_US
dc.date.accessioned2011-06-30T20:26:20Zen_US
dc.date.accessioned2012-05-03T19:45:49Z
dc.date.available2011-06-30T20:26:20Zen_US
dc.date.available2012-05-03T19:45:49Z
dc.date.issued2010-01-21en_US
dc.identifier.urihttp://hdl.handle.net/2346/22875en_US
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.relation.ispartofseriesCenter for Nanophotonics;96-031908en_US
dc.titleEnhancing Erbium Emission by Strain Engineering in GaN Heteroepitaxial Layersen
dc.title.alternativeApplied Physics Letters 96, 031908en
dc.typeArticleen
ttu.departmentCenter for Nanophotonicsen
ttu.emailjing.li@ttu.eduen
ttu.emaila.sedhain@ttu.eduen
ttu.emailjingyu.lin@ttu.eduen
ttu.emailhx.jiang@ttu.eduen


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