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dc.contributor.authorWeyburne, Daviden_US
dc.contributor.authorPaduano, Q.S.en_US
dc.contributor.authorJiang, H.X.en_US
dc.contributor.authorLin, J.Y.en_US
dc.contributor.authorLi, J.en_US
dc.contributor.authorNepal, N.en_US
dc.contributor.authorNakarmi, M.L.en_US
dc.contributor.authorDahal, R.en_US
dc.contributor.authorPantha, B.N.en_US
dc.date.accessioned2011-07-11T20:38:56Zen_US
dc.date.accessioned2012-05-03T19:59:36Z
dc.date.available2011-07-11T20:38:56Zen_US
dc.date.available2012-05-03T19:59:36Z
dc.date.issued2007-06-11en_US
dc.identifier.urihttp://hdl.handle.net/2346/22913en_US
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.relation.ispartofseriesCenter for Nanophotonics;90-241101en_US
dc.titleCorrelation Between Optoelectronic and Structural Properties and Epilayer Thickness of AlNen
dc.title.alternativeApplied Physics Letters 90, 241101en
dc.typeArticleen
ttu.departmentCenter for Nanophotonicsen
ttu.emailhx.jiang@ttu.eduen
ttu.emailjingyu.lin@ttu.eduen
ttu.emailjing.li@ttu.eduen
ttu.emailrajendra.dahal@ttu.eduen
ttu.emailbed.pantha@ttu.eduen


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