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dc.contributor.authorGwilliam, R.en_US
dc.contributor.authorPearton, S.J.en_US
dc.contributor.authorAbernathy, C.R.en_US
dc.contributor.authorThaler, G.T.en_US
dc.contributor.authorHite, J.en_US
dc.contributor.authorHommerich, U.en_US
dc.contributor.authorBrown, E.en_US
dc.contributor.authorJiang, H.X.en_US
dc.contributor.authorLin, J.Y.en_US
dc.contributor.authorNepal, N.en_US
dc.contributor.authorZavada, J.M.en_US
dc.date.accessioned2011-07-12T19:05:19Zen_US
dc.date.accessioned2012-05-03T20:11:52Z
dc.date.available2011-07-12T19:05:19Zen_US
dc.date.available2012-05-03T20:11:52Z
dc.date.issued2006-10-10en_US
dc.identifier.urihttp://hdl.handle.net/2346/22920en_US
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.relation.ispartofseriesCenter for Nanophotonics;89-152107en_US
dc.titleUltraviolet Photoluminescence from Gd-Implanted AlN Epilyersen
dc.title.alternativeApplied Physics Letters 89, 152107en
dc.typeArticleen
ttu.departmentCenter for Nanophotonicsen
ttu.emailjingyu.lin@ttu.eduen
ttu.emailhx.jiang@ttu.eduen


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