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dc.contributor.authorSenger, R.T.en_US
dc.contributor.authorKoleske, D.D.en_US
dc.contributor.authorJiang, H.X.en_US
dc.contributor.authorLin, J.Y.en_US
dc.contributor.authorBajaj, K.K.en_US
dc.contributor.authorMahajan, S.en_US
dc.contributor.authorWestmeyer, A.N.en_US
dc.date.accessioned2011-07-13T20:10:44Zen_US
dc.date.accessioned2012-05-03T20:16:58Z
dc.date.available2011-07-13T20:10:44Zen_US
dc.date.available2012-05-03T20:16:58Z
dc.date.issued2006-01-09en_US
dc.identifier.urihttp://hdl.handle.net/2346/22933en_US
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.relation.ispartofseriesCenter for Nanophotonics;99-013705en_US
dc.titleDetermination of Energy-Band Offsets Between GaN and AlN Using Excitonic Luminescence Transition in AlGaN Alloysen
dc.title.alternativeJournal of Applied Physics 99, 013705en
dc.typeArticleen
ttu.departmentCenter for Nanophotonicsen
ttu.emailhx.jiang@ttu.eduen
ttu.emailjingyu.lin@ttu.eduen


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