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Enhancing Erbium Emission by Strain Engineering in GaN Heteroepitaxial Layers
(American Institute of Physics, 2010-01-21)
Growth and Photoluminescence Studies of A-Plane AlN/Al_x_Ga_1-x_N
(American Institute of Physics, 2007-05-29)
Polarization of III-Nitride Blue and Ultraviolet Light-Emitting Diodes
(American Institute of Physics, 2005-02-25)
Mg Acceptor Level in InN Epilayers Probed by Photoluminescence
(American Institute of Physics, 2007-07-02)
Optical Enhancement of Room Temperature Ferromagnetism in Er-Doped GaN Epilayers
(American Institute of Physics, 2009-07-14)
Evolutiong of Phase Separation in In-Rich InGaN Alloys
(American Institute of Physics, 2010-06-11)
Probing Exciton-Phonon Interaction in AIN Epilayers by Photoluminescence
(American Institute of Physics, 2009-08-14)
Transport Properties of Highly Conductive N-type Al-rich Al_x_Ga_1-x_N (x>=0.7)
(American Institute of Physics, 2004-10-25)
Nitride Deep-Ultraviolet Light-Emitting Diodes with Microlens Array
(American Institute of Physics, 2005-04-18)
Current-Injected 1.54 Micrometers Light Emitting Diodes Based on Erbium-Doped
(American Institute of Physics, 2008-07-21)