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Evolution of surface roughness of AlN and GaN induced
(American Institute of Physics, 2004-05-01)
We study the effects of plasma etching on the evolution of surface roughness of GaN and AlN. The
etch-induced roughness is investigated using atomic force microscopy by systematically varying
plasma power, chamber pressure, ...
Reflective Arrayed Waveguide Grating Multiplexer
(IEEE, 2003-10)
High-performance reflective arrayed waveguide
grating multiplexer/demultiplexer designed for compatibility with
silicon integrated circuit processing is described. The grating,
folded by a flat reflecting surface, can be ...
Temperature-Insensitive ReflectiveArrayed-Waveguide Grating Multiplexers
(Institute of Electronics and Electrical Engineers, 2004-03)
We present a new approach to temperature compensation
of silica-based arrayed-waveguide grating multiplexers. An
external mirror rotating with temperature at a constant rate, in
combination with a reflective multiplexer, ...
Initial growth of interfacial oxide during deposition of HfO2 on silicon
(American Institute of Physics, 2004-07-12)
Interfacial chemistry of Hf/ Si, HfO2 /SiO2 / Si, and HfO2 /Si is investigated by x-ray photoelectron
spectroscopy in order to understand the interfacial layer formation mechanism. Deposition of Hf and
HfO2 films was carried ...
Dependence of the stress–temperature coefficient on dislocation density
(American Institute of Physics, 2004-02-15)
We report measurements of stress in GaN epitaxial layers grown on 6H–SiC and a-Al2O3
substrates. Biaxial stresses span 11.0 GPa ~tensile! to 21.2 GPa ~compressive!. Stress determined
from curvature measurements, obtained ...
AlNÕAlGaInN superlattice light-emitting diodes at 280 nm
(American Institute of Physics, 2003-02-01)
Ultraviolet light-emitting diodes operating at 280 nm, grown by gas source molecular-beam epitaxy
with ammonia, are described. The device is composed of n- and p-type superlattices of AlN~1.2 nm
thick!/AlGaInN~0.5 nm thick! ...
Effects of power truncation on the insertion loss and crosstalk
(American Institute of Physics, 2003-09)
A measurement of the insertion loss and crosstalk in folded, 100 GHz, arrayed waveguide multiplexers as a function of the number of grating waveguides is described. The number of grating waveguides can be varied in a single ...
Microfabrication and Characterization of Teflon AF-Coated Liquid Core Waveguide Channels in Silicon
(Institute of Elecrtonics and Electrical Engineers., 2003-12-06)
The fabrication and testing of Teflon AF-coated
channels on silicon and bonding of the same to a similarly coated
glass wafer are described.With water or aqueous solutions in such
channels, the channels exhibit much better ...
Digital Alloys of AlN/AlGaN for Deep UV Light Emitting Diodes
(The Japan Society of Applied Physics, 2005-10-11)
We report a systematic study of the optical and electrical properties of deep ultraviolet light emitting diodes based on digital
alloy structures of AlN/Al0:08Ga0:92N grown by gas source molecular beam epitaxy with ammonia. ...
Direct space-to-time pulse shaper with reflective
(Optical Society of America, 2006-03-01)
We demonstrate for what we believe to be the first time the generation of sequences of ultrafast optical
pulses by phase modulation in a direct space-to-time pulse shaper. The pulse shaper is based on the combination
of a ...