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Electrical properties of p –n junctions based on superlattices
(American Institute of Physics, 2003-08-18)
Measurements of acceptor activation energy in p – n junctions based on superlattices of AlN ~1.25
nm thick! and Al0.08Ga0.92(In!N ~0.5 nm thick!, with the average AlN content greater than 0.6, are
reported. Structural ...
Evolution of surface roughness of AlN and GaN induced
(American Institute of Physics, 2004-05-01)
We study the effects of plasma etching on the evolution of surface roughness of GaN and AlN. The
etch-induced roughness is investigated using atomic force microscopy by systematically varying
plasma power, chamber pressure, ...
High-Resolution Pulse Shaper Based on Arrays of
(Institute of Electrical and Electronics Engineers, 2005-10)
We describe an optical Fourier transform pulse
shaper based on a combination of a diffraction grating and a
reconfigurable array of digital micromirrors. The pulse shaper
allows for adjustment of separation between consecutive ...
Direct space-to-time pulse shaper with reflective
(Optical Society of America, 2006-03-01)
We demonstrate for what we believe to be the first time the generation of sequences of ultrafast optical
pulses by phase modulation in a direct space-to-time pulse shaper. The pulse shaper is based on the combination
of a ...
Dependence of the stress–temperature coefficient on dislocation density
(American Institute of Physics, 2004-02-15)
We report measurements of stress in GaN epitaxial layers grown on 6H–SiC and a-Al2O3
substrates. Biaxial stresses span 11.0 GPa ~tensile! to 21.2 GPa ~compressive!. Stress determined
from curvature measurements, obtained ...
Generation of Arbitrary Sequences of Ultrafast
(Institute of Electronic and Electrical Engineers, 2007-02-15)
We report a new approach to the generation of arbitrary sequences of ultrafast pulses using an integrated optics space-to-time optical processor. The processor combines a reflective arrayed waveguide grating multiplexer ...
DIELECTRIC FUNCTION OF AlN GROWN ON Si (111) BY MBE
(Materials Research Society, 2000)
We measured the ellipsometric response from 0.7-5.4 eV of c-axis oriented AlN on Si (111)
grown by molecular beam epitaxy. We determine the film thicknesses and find that for our AlN
the refractive index is about 5-10% ...
Ignition studies of AlÕFe2O3 energetic nanocomposites
(American Institute of Physics, 2004-06-07)
We prepare energetic nanocomposites, which undergo an exothermic reaction when ignited at
moderate temperature. The nanocomposites are a mixture of Al fuel and Fe2O3 oxidizer where
Fe2O3 is in the form of an array of ...
Generation of Ultrafast Pulse Sequences With
(Institute of Electronics and Electrical Engineers, 2006-05-15)
We demonstrate a novel approach to generation of sequences
of ultrafast pulses in which external stress is applied to
arrayed waveguide grating multiplexers using a corrugated pattern.
Stress applied to the grating region ...
Enhanced deep ultraviolet luminescence from AlGaN quantum wells grown
(American Institute of Physics, 2005-10-31)
We report a significant improvement in the room temperature cathodoluminescence efficiency of
AlGaN quantum wells when the three-dimensional growth mode is induced by reduced flux of
ammonia. We interpret this observation ...