Recherche
Voici les éléments 1-10 de 15
Optical Enhancement of Room Temperature Ferromagnetism in Er-Doped GaN Epilayers
(American Institute of Physics, 2009-07-14)
Current-Injected 1.54 Micrometers Light Emitting Diodes Based on Erbium-Doped
(American Institute of Physics, 2008-07-21)
AlN Avalanche Photodetectors
(American Institute of Physics, 2007-12-10)
Correlation Between Optoelectronic and Structural Properties and Epilayer Thickness of AlN
(American Institute of Physics, 2007-06-11)
Erbium-Doped GaN Optical Amplifiers Operating at 1.54 Micrometers
(American Institute of Physics, 2009-09-16)
Hybrid AlN-SiC Deep Ultraviolet Schottky Barrier Photodetectors
(American Institute of Physics, 2007-06-26)
Thermoelectric Properties of In_.3_Ga_.7_N Alloys
(TMS, 2009-02-07)
Recent Developments of Wide-Bandgap Semiconductor Based UV Sensors
(Elsevier B.V., 2008)
InGaN/GaN Multiple Quantum Well Solar Cells with Long Operating Wavelengths
(American Institute of Physics, 2009-02-10)