Recherche

Voici les éléments 1-10 de 15

Optical Enhancement of Room Temperature Ferromagnetism in Er-Doped GaN Epilayers

Jiang, H.X.; Lin, J.Y.; Sedhain, A.; Ugolini, C.; Dahal, R.; Zavada, J.M.; Nepal, N. (American Institute of Physics, 2009-07-14)

Current-Injected 1.54 Micrometers Light Emitting Diodes Based on Erbium-Doped

Zavada, J.M.; Jiang, H.X.; Lin, J.Y.; Ugolini, C.; Dahal, R. (American Institute of Physics, 2008-07-21)

AlN Avalanche Photodetectors

Jiang, H.X.; Lin, J.Y.; Al Tahtamouni, T.M.; Dahal, R. (American Institute of Physics, 2007-12-10)

Correlation Between Optoelectronic and Structural Properties and Epilayer Thickness of AlN

Weyburne, David; Paduano, Q.S.; Jiang, H.X.; Lin, J.Y.; Li, J.; Nepal, N.; Nakarmi, M.L.; Dahal, R.; Pantha, B.N. (American Institute of Physics, 2007-06-11)

Erbium-Doped GaN Optical Amplifiers Operating at 1.54 Micrometers

Zavada, J.M.; Jiang, H.X.; Lin, J.Y.; Ugolini, C.; Dahal, R. (American Institute of Physics, 2009-09-16)

Hybrid AlN-SiC Deep Ultraviolet Schottky Barrier Photodetectors

Jiang, H.X.; Lin, J.Y.; Fan, Z.Y.; Al Tahtamouni, T.M.; Dahal, R. (American Institute of Physics, 2007-06-26)

Thermoelectric Properties of In_.3_Ga_.7_N Alloys

Pomrenke, G.; Jiang, H.X.; Lin, J.Y.; Li, J.; Dahal, R.; Pantha, B.N. (TMS, 2009-02-07)

200 Nanometer Deep Ultraviolet Photodetectors basen on AlN

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Dahal, R.; Fan, Z.Y.; Li, J, (2011-07-12)

Recent Developments of Wide-Bandgap Semiconductor Based UV Sensors

Hochedez, J.F.; Scholze, F.; Richter, M.; Giordanengo, B.; De Jaeger, J.C.; Mortet, V.; Laubis, C.; Kroth, U.; Hermans, C.; Bolsee, D.; BenMoussa, B.; Barkad, H.A.; Jiang, H.X.; Lin, J.Y.; Dahal, R.; Zhang, W.J.; Chong, Y.M.; Haenen, K.; Schuhle, U.; Soltani, A.; BenMoussa, A. (Elsevier B.V., 2008)

InGaN/GaN Multiple Quantum Well Solar Cells with Long Operating Wavelengths

Jiang, H.X.; Lin, J.Y.; Li, J.; Pantha, B.; Dahal, R. (American Institute of Physics, 2009-02-10)