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Enhancing Erbium Emission by Strain Engineering in GaN Heteroepitaxial Layers 

Zavada, J.; Jiang, H.X.; Lin, J. Y.; Sedhain, A.; Li, J.; Feng, I.W. (American Institute of Physics, 2010-01-21)
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Polarization of III-Nitride Blue and Ultraviolet Light-Emitting Diodes 

Jiang, H.X.; Lin, J.Y.; Li, J.; Kim, K.H.; Knabe, K.; Shakya, J. (American Institute of Physics, 2005-02-25)
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Evolutiong of Phase Separation in In-Rich InGaN Alloys 

Jiang, H.X.; Lin, J.Y.; Li, J.; Pantha, B.N. (American Institute of Physics, 2010-06-11)
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Probing Exciton-Phonon Interaction in AIN Epilayers by Photoluminescence 

Jiang, H.X.; Lin, J.Y.; Li, J.; Sedhain, A. (American Institute of Physics, 2009-08-14)
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Tempertature and Compositional Dependence of the Energy Band Gap of AlGaN Alloys 

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Li, J.; Nepal, N. (American Institute of Physics, 2005-12-07)
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Beryllium Acceptor Binding Energy in AlN 

Jiang, H.X.; Lin, J.Y.; Li, J.; Tahtamouni, T.M. Al; Sedhain, A. (American Institute of Physics, 2008-10-07)
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Optical Properties of AlN and GaN in Elevated Temperatures 

Jiang, H.X.; Lin, J.Y.; Li, J.; Nam, K.B. (American Institute of Physics, 2004-10-18)
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Effects of Plasma Treatment on the Ohmic Characteristics of Ti/Al/Ti/Au Contacts to n-AlGaN 

Jiang, H.X.; Lin, J.Y.; Li, J.; LeBoeuf, S.F.; Piao, H.; Cao, X.A. (American Institute of Physics, 2006-08-25)
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High Mobility InN Epilyers Grown on AlN Epilayer Templates 

Jiang, H.X.; Lin, J.Y.; Li, J.; Sedhain, A.; Khan, N. (American Institute of Physics, 2008-04-28)
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AlGaN/GaN/AlN Quantum-Well Field-Effect Transistors with Highly Resistive AlN Epilayers 

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Li, J.; Fan, Z.Y. (American Institute of Physics, 2006-02-16)
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Jiang, H.X. (28)
Li, J. (28)
Lin, J.Y. (27)Pantha, B.N. (10)Sedhain, A. (8)Nakarmi, M.L. (7)Dahal, R. (6)Nepal, N. (5)Nam, K.B. (3)BenMoussa, A. (2)... View MoreDate Issued2008 (6)2010 (6)2006 (5)2009 (5)2004 (2)2005 (2)2007 (2)Has File(s)Yes (28)

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