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Transport Properties of Highly Conductive N-type Al-rich Al_x_Ga_1-x_N (x>=0.7)
(American Institute of Physics, 2004-10-25)
Tempertature and Compositional Dependence of the Energy Band Gap of AlGaN Alloys
(American Institute of Physics, 2005-12-07)
Mg Doped Al-Rich AlGaN Alloys for Deep UV Emitters
(SPIE, 2004)
Photoluminescence Properties of AlN Homoepilayers with Different Orientations
(American Institute of Physics, 2008-07-29)
AlGaN-Based Ultraviolet Light-Emitting Diodes Grown on AlN Epilayers
(American Institute of Physics, 2004-11-15)
Band-Edge Exciton States in AlN Single Crystals and Epitaxial Layers
(American Institute of Physics, 2004-11-08)
AlGaN/GaN/AlN Quantum-Well Field-Effect Transistors with Highly Resistive AlN Epilayers
(American Institute of Physics, 2006-02-16)
Deep Ultraviolet Photoluminescence Studies of AlN Photonic Crystals
(American Institute of Physics, 2006-03-29)
Higher Lying Conduction Band in GaN and AlN Probed by Photoluminescence Spectroscopy
(American Institute of Physics, 2006-06-30)
Correlation Between Biaxial Stress and Free Exciton Transition in AlN Epilayers
(American Institute of Physics, 2007-09-20)