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Transport Properties of Highly Conductive N-type Al-rich Al_x_Ga_1-x_N (x>=0.7)

Jiang, H.X.; Lin, J.Y.; Zhu, K.; Kim, K.H.; Nakarmi, M.L. (American Institute of Physics, 2004-10-25)

Tempertature and Compositional Dependence of the Energy Band Gap of AlGaN Alloys

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Li, J.; Nepal, N. (American Institute of Physics, 2005-12-07)

Mg Doped Al-Rich AlGaN Alloys for Deep UV Emitters

Jiang, H.X.; Lin, J.Y.; Zhu, K.; Kim, K.H.; Nakarmi, M.L. (SPIE, 2004)

Photoluminescence Properties of AlN Homoepilayers with Different Orientations

Edgar, J.H.; Gu, Z.; Jiang, H.X.; Lin, J.Y.; Al Tahtamouni, T.M.; Nakarmi, M.L.; Nepal, N.; Sedhain, A. (American Institute of Physics, 2008-07-29)

AlGaN-Based Ultraviolet Light-Emitting Diodes Grown on AlN Epilayers

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Khizar, M.L.; Fan, Z.Y.; Kim, K.H. (American Institute of Physics, 2004-11-15)

Band-Edge Exciton States in AlN Single Crystals and Epitaxial Layers

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Khan, M.A.; Yang, J.; Sun, W.; Chen, C.; Sitar, Z.; Schlesser, R.; Dalmau, R.F.; Skromme, B.J.; Chen, L. (American Institute of Physics, 2004-11-08)

AlGaN/GaN/AlN Quantum-Well Field-Effect Transistors with Highly Resistive AlN Epilayers

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Li, J.; Fan, Z.Y. (American Institute of Physics, 2006-02-16)

Deep Ultraviolet Photoluminescence Studies of AlN Photonic Crystals

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Shakya, J.; Nepal, N. (American Institute of Physics, 2006-03-29)

Higher Lying Conduction Band in GaN and AlN Probed by Photoluminescence Spectroscopy

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Li, J.; Nam, K.B.; Nepal, N. (American Institute of Physics, 2006-06-30)

Correlation Between Biaxial Stress and Free Exciton Transition in AlN Epilayers

Jiang, H.X.; Lin, J.Y.; Li, J.; Nakarmi, M.L.; Al Tahtamouni, T.M.; Nepal, N.; Pantha, B.N. (American Institute of Physics, 2007-09-20)