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Mg Acceptor Level in InN Epilayers Probed by Photoluminescence
(American Institute of Physics, 2007-07-02)
Optical Enhancement of Room Temperature Ferromagnetism in Er-Doped GaN Epilayers
(American Institute of Physics, 2009-07-14)
Tempertature and Compositional Dependence of the Energy Band Gap of AlGaN Alloys
(American Institute of Physics, 2005-12-07)
Erbium -Doped GaN Epilayers Synthesized by Metal-Organic Chemical Vapor Deposition
(American Institute of Physics, 2006-10-09)
Photoluminescence Properties of AlN Homoepilayers with Different Orientations
(American Institute of Physics, 2008-07-29)
Ultraviolet Photoluminescence from Gd-Implanted AlN Epilyers
(American Institute of Physics, 2006-10-10)
Optical and Magnetic Behavior of Erbium-Doped GaN Epilayers by Metal-Organic Chemical Vapor Deposition
(American Institute of Physics, 2007-08-01)
Deep Ultraviolet Photoluminescence Studies of AlN Photonic Crystals
(American Institute of Physics, 2006-03-29)
Higher Lying Conduction Band in GaN and AlN Probed by Photoluminescence Spectroscopy
(American Institute of Physics, 2006-06-30)
Correlation Between Biaxial Stress and Free Exciton Transition in AlN Epilayers
(American Institute of Physics, 2007-09-20)