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Now showing items 1-10 of 11
Growth and Photoluminescence Studies of A-Plane AlN/Al_x_Ga_1-x_N
(American Institute of Physics, 2007-05-29)
Mg Acceptor Level in InN Epilayers Probed by Photoluminescence
(American Institute of Physics, 2007-07-02)
AlN Avalanche Photodetectors
(American Institute of Physics, 2007-12-10)
Optical and Magnetic Behavior of Erbium-Doped GaN Epilayers by Metal-Organic Chemical Vapor Deposition
(American Institute of Physics, 2007-08-01)
Correlation Between Biaxial Stress and Free Exciton Transition in AlN Epilayers
(American Institute of Physics, 2007-09-20)
Correlation Between Optoelectronic and Structural Properties and Epilayer Thickness of AlN
(American Institute of Physics, 2007-06-11)
Hybrid AlN-SiC Deep Ultraviolet Schottky Barrier Photodetectors
(American Institute of Physics, 2007-06-26)
Effects of the Wave Function Localization in AlInGaN Quaternary Alloys
(American Institute of Physics, 2007-08-10)
Excitation Dynamics of the 1.54 Micrometer Emission in Er Doped GaN Synthesized by Metal Organic Chemical Vapor Deposition
(American Institute of Physics, 2007-02-01)
Spectroscopic Studies of Er-Centers in MOCVD Grown GaN Layers Highly Doped with Er
(Elsevier B.V., 2007)