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Optical Enhancement of Room Temperature Ferromagnetism in Er-Doped GaN Epilayers

Jiang, H.X.; Lin, J.Y.; Sedhain, A.; Ugolini, C.; Dahal, R.; Zavada, J.M.; Nepal, N. (American Institute of Physics, 2009-07-14)

Probing Exciton-Phonon Interaction in AIN Epilayers by Photoluminescence

Jiang, H.X.; Lin, J.Y.; Li, J.; Sedhain, A. (American Institute of Physics, 2009-08-14)

Temperature-Dependent Photoluminescence and Electron Field Emission Properties of AIN Nanotip Arrays

Lin, J.Y.; Jiang, H.X.; Lau, S.P.; Zhang, Q.Y.; Ji, X.H. (American Institute of Physics, 2009-04-28)

Erbium-Doped GaN Optical Amplifiers Operating at 1.54 Micrometers

Zavada, J.M.; Jiang, H.X.; Lin, J.Y.; Ugolini, C.; Dahal, R. (American Institute of Physics, 2009-09-16)

Thermoelectric Properties of In_.3_Ga_.7_N Alloys

Pomrenke, G.; Jiang, H.X.; Lin, J.Y.; Li, J.; Dahal, R.; Pantha, B.N. (TMS, 2009-02-07)

Photoluminescence Studies of Impurity Transitions in Mg-Doped AlGaN Alloys

Jiang, H.X.; Lin, J.Y.; Nepal, N.; Nakarmi, M.L. (American Institute of Physics, 2009-03-04)

Electrical and Optical Properties of P-Type InGaN

Jiang, H.X.; Lin, J.Y.; Li, J.; Sedhain, A.; Pantha, B.N. (American Institute of Physics, 2009-12-29)

InGaN/GaN Multiple Quantum Well Solar Cells with Long Operating Wavelengths

Jiang, H.X.; Lin, J.Y.; Li, J.; Pantha, B.; Dahal, R. (American Institute of Physics, 2009-02-10)

High Quality AIN for Deep UV Photodetectors

Holtz, M.; Harris, H.; Jiang, H.X.; Lin, J.Y.; Dahal, R.; Pandikunta, M.; Borisov, B.; Nikishin, S. (American Institute of Physics, 2009-08-06)

Recent ROB Developments on Wide Bandgap Based UV Sensors

Jiang, H.X.; Lin, J.Y.; Li, J.; Dahal, R.; S.T., Lee; Zhang, W.J.; Zou, Y.S.; Chong, Y.M.; Duboz, J.Y.; Malinowski, P.; Minoglou, K.; de Moor, P.; Soltani, A.; Hochedez, J.F.; BenMoussa, A.; Giordanengo, B. (EDP Sciences, 2009)