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Growth and Photoluminescence Studies of A-Plane AlN/Al_x_Ga_1-x_N 

Jiang, H.X.; Lin, J.Y.; Sedhain, A.; Al Tahtamouni, T.M. (American Institute of Physics, 2007-05-29)
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Polarization of III-Nitride Blue and Ultraviolet Light-Emitting Diodes 

Jiang, H.X.; Lin, J.Y.; Li, J.; Kim, K.H.; Knabe, K.; Shakya, J. (American Institute of Physics, 2005-02-25)
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Mg Acceptor Level in InN Epilayers Probed by Photoluminescence 

Jiang, H.X.; Lin, J.Y.; Sedhain, A.; Nepal, N.; Khan, N. (American Institute of Physics, 2007-07-02)
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Optical Enhancement of Room Temperature Ferromagnetism in Er-Doped GaN Epilayers 

Jiang, H.X.; Lin, J.Y.; Sedhain, A.; Ugolini, C.; Dahal, R.; Zavada, J.M.; Nepal, N. (American Institute of Physics, 2009-07-14)
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Evolutiong of Phase Separation in In-Rich InGaN Alloys 

Jiang, H.X.; Lin, J.Y.; Li, J.; Pantha, B.N. (American Institute of Physics, 2010-06-11)
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Probing Exciton-Phonon Interaction in AIN Epilayers by Photoluminescence 

Jiang, H.X.; Lin, J.Y.; Li, J.; Sedhain, A. (American Institute of Physics, 2009-08-14)
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Transport Properties of Highly Conductive N-type Al-rich Al_x_Ga_1-x_N (x>=0.7) 

Jiang, H.X.; Lin, J.Y.; Zhu, K.; Kim, K.H.; Nakarmi, M.L. (American Institute of Physics, 2004-10-25)
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Nitride Deep-Ultraviolet Light-Emitting Diodes with Microlens Array 

Jiang, H.X.; Lin, J.Y.; Kim, K.H.; Fan, Z.Y.; Khizar, M. (American Institute of Physics, 2005-04-18)
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Current-Injected 1.54 Micrometers Light Emitting Diodes Based on Erbium-Doped 

Zavada, J.M.; Jiang, H.X.; Lin, J.Y.; Ugolini, C.; Dahal, R. (American Institute of Physics, 2008-07-21)
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Tempertature and Compositional Dependence of the Energy Band Gap of AlGaN Alloys 

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Li, J.; Nepal, N. (American Institute of Physics, 2005-12-07)
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Jiang, H.X. (79)
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Li, J. (27)Nakarmi, M.L. (22)Nepal, N. (22)Sedhain, A. (17)Dahal, R. (15)Pantha, B.N. (11)Zavada, J.M. (11)Kim, K.H. (10)... View MoreDate Issued2004 (16)2006 (14)2009 (13)2008 (12)2007 (11)2010 (7)2005 (5)2011 (1)Has File(s)Yes (79)

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