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Now showing items 1-10 of 17
Growth and Photoluminescence Studies of A-Plane AlN/Al_x_Ga_1-x_N
(American Institute of Physics, 2007-05-29)
Mg Acceptor Level in InN Epilayers Probed by Photoluminescence
(American Institute of Physics, 2007-07-02)
Optical Enhancement of Room Temperature Ferromagnetism in Er-Doped GaN Epilayers
(American Institute of Physics, 2009-07-14)
Probing Exciton-Phonon Interaction in AIN Epilayers by Photoluminescence
(American Institute of Physics, 2009-08-14)
Beryllium Acceptor Binding Energy in AlN
(American Institute of Physics, 2008-10-07)
High Mobility InN Epilyers Grown on AlN Epilayer Templates
(American Institute of Physics, 2008-04-28)
Photoluminescence Properties of AlN Homoepilayers with Different Orientations
(American Institute of Physics, 2008-07-29)
Si-Doped High Al-Content AlGaN Epilayers with Improved Quality and Conductivity Using Indium as a Surfactant
(American Institute of Physics, 2008-03-04)
Probing the Relationship Between Structural and Optical Properties of Si-Doped AIN
(American Institute of Physics, 2010-04-01)
Achieving P-In_x_Ga_1-x_N Alloys with High In Contents
(The International Society for Optics and Photonics, 2010)