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Now showing items 1-10 of 11
Optical Enhancement of Room Temperature Ferromagnetism in Er-Doped GaN Epilayers
(American Institute of Physics, 2009-07-14)
Current-Injected 1.54 Micrometers Light Emitting Diodes Based on Erbium-Doped
(American Institute of Physics, 2008-07-21)
Erbium -Doped GaN Epilayers Synthesized by Metal-Organic Chemical Vapor Deposition
(American Institute of Physics, 2006-10-09)
Ultraviolet Photoluminescence from Gd-Implanted AlN Epilyers
(American Institute of Physics, 2006-10-10)
Optical and Magnetic Behavior of Erbium-Doped GaN Epilayers by Metal-Organic Chemical Vapor Deposition
(American Institute of Physics, 2007-08-01)
Electroluminescent Properties of Erbium-Doped III-N Light-Emitting Diodes
(American Institute of Physics, 2004-02-16)
Erbium-Doped GaN Optical Amplifiers Operating at 1.54 Micrometers
(American Institute of Physics, 2009-09-16)
Optical Properties of the Nitrogen Vacancy in AlN Epilayers
(American Institute of Physics, 2004-02-16)
Deep Ultraviolet Photoluminescence of Tm-Doped AlGaN Alloys
(American Institute of Physics, 2009-03-16)
Excitation Dynamics of the 1.54 Micrometer Emission in Er Doped GaN Synthesized by Metal Organic Chemical Vapor Deposition
(American Institute of Physics, 2007-02-01)