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Correlation Between Optical and Electrical properties of Mg-doped AlN Epilayers

Jiang, H.X.; Lin, J.Y.; Al Tahtamouni, T.M.; Ugolini, C.; Nepal, N.; Nakarmi, M.L. (American Institute of Physics, 2006-10-13)

Ultraviolet Photoluminescence from Gd-Implanted AlN Epilyers

Gwilliam, R.; Pearton, S.J.; Abernathy, C.R.; Thaler, G.T.; Hite, J.; Hommerich, U.; Brown, E.; Jiang, H.X.; Lin, J.Y.; Nepal, N.; Zavada, J.M. (American Institute of Physics, 2006-10-10)

Effects of Plasma Treatment on the Ohmic Characteristics of Ti/Al/Ti/Au Contacts to n-AlGaN

Jiang, H.X.; Lin, J.Y.; Li, J.; LeBoeuf, S.F.; Piao, H.; Cao, X.A. (American Institute of Physics, 2006-08-25)

Higher Lying Conduction Band in GaN and AlN Probed by Photoluminescence Spectroscopy

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Li, J.; Nam, K.B.; Nepal, N. (American Institute of Physics, 2006-06-30)

Deep Ultraviolet Photoluminescence Studies of AlN Photonic Crystals

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Shakya, J.; Nepal, N. (American Institute of Physics, 2006-03-29)

Photoluminescence Studies of Impurity Transitions in AlGaN Alloys

Jiang, H.X.; Lin, J.Y. (American Institute of Physics, 2006-08-29)

Growth and Photoluminescence Studies of Al rich AlN/Al_x_Ga_1-x_N Quantum Wells

Chow, W.W.; Jiang, H.X.; Lin, J.Y.; Nepal, N.; Al Tahtamouni, T.M. (American Institute of Physics, 2006-09-29)

Growth and Photoluminescence Studies of Zn-Doped AlN Epilayers

Nakarmi, M.L.; Jiang, H.X.; Lin, J.Y.; Jang, H.U.; Nepal, N. (American Institute of Physics, 2006-11-10)

Erbium -Doped GaN Epilayers Synthesized by Metal-Organic Chemical Vapor Deposition

Zavada, J.M.; Jiang, H.X.; Lin, J.Y.; Nepal, N.; Ugolini, C. (American Institute of Physics, 2006-10-09)

AlGaN/GaN/AlN Quantum-Well Field-Effect Transistors with Highly Resistive AlN Epilayers

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Li, J.; Fan, Z.Y. (American Institute of Physics, 2006-02-16)