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Now showing items 1-10 of 14
Effects of Plasma Treatment on the Ohmic Characteristics of Ti/Al/Ti/Au Contacts to n-AlGaN
(American Institute of Physics, 2006-08-25)
Erbium -Doped GaN Epilayers Synthesized by Metal-Organic Chemical Vapor Deposition
(American Institute of Physics, 2006-10-09)
Ultraviolet Photoluminescence from Gd-Implanted AlN Epilyers
(American Institute of Physics, 2006-10-10)
AlGaN/GaN/AlN Quantum-Well Field-Effect Transistors with Highly Resistive AlN Epilayers
(American Institute of Physics, 2006-02-16)
Deep Ultraviolet Photoluminescence Studies of AlN Photonic Crystals
(American Institute of Physics, 2006-03-29)
Higher Lying Conduction Band in GaN and AlN Probed by Photoluminescence Spectroscopy
(American Institute of Physics, 2006-06-30)
Thermally Stable Schottky Contacts on N-Type GaN Using ZrB_2_
(American Institute of Physics, 2006-05-04)
Growth of III-Nitride Photonic Structures on Large Area Silicon Substrates
(American Institute of Physics, 2006-04-26)
Exciton Localization in AlGaN Alloys
(American Institute of Physics, 2006-02-06)
Determination of Energy-Band Offsets Between GaN and AlN Using Excitonic Luminescence Transition in AlGaN Alloys
(American Institute of Physics, 2006-01-09)