Search

Now showing items 1-10 of 14

Effects of Plasma Treatment on the Ohmic Characteristics of Ti/Al/Ti/Au Contacts to n-AlGaN

Jiang, H.X.; Lin, J.Y.; Li, J.; LeBoeuf, S.F.; Piao, H.; Cao, X.A. (American Institute of Physics, 2006-08-25)

Erbium -Doped GaN Epilayers Synthesized by Metal-Organic Chemical Vapor Deposition

Zavada, J.M.; Jiang, H.X.; Lin, J.Y.; Nepal, N.; Ugolini, C. (American Institute of Physics, 2006-10-09)

Ultraviolet Photoluminescence from Gd-Implanted AlN Epilyers

Gwilliam, R.; Pearton, S.J.; Abernathy, C.R.; Thaler, G.T.; Hite, J.; Hommerich, U.; Brown, E.; Jiang, H.X.; Lin, J.Y.; Nepal, N.; Zavada, J.M. (American Institute of Physics, 2006-10-10)

AlGaN/GaN/AlN Quantum-Well Field-Effect Transistors with Highly Resistive AlN Epilayers

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Li, J.; Fan, Z.Y. (American Institute of Physics, 2006-02-16)

Deep Ultraviolet Photoluminescence Studies of AlN Photonic Crystals

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Shakya, J.; Nepal, N. (American Institute of Physics, 2006-03-29)

Higher Lying Conduction Band in GaN and AlN Probed by Photoluminescence Spectroscopy

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Li, J.; Nam, K.B.; Nepal, N. (American Institute of Physics, 2006-06-30)

Thermally Stable Schottky Contacts on N-Type GaN Using ZrB_2_

Isaacs-Smith, T.; Williams, J.R.; Jiang, H.X.; Lin, J.Y.; Martin, P.; Oder, T.N. (American Institute of Physics, 2006-05-04)

Growth of III-Nitride Photonic Structures on Large Area Silicon Substrates

Jiang, H.X.; Lin, J.Y.; Li, J. (American Institute of Physics, 2006-04-26)

Exciton Localization in AlGaN Alloys

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Li, J.; Nepal, N. (American Institute of Physics, 2006-02-06)

Determination of Energy-Band Offsets Between GaN and AlN Using Excitonic Luminescence Transition in AlGaN Alloys

Senger, R.T.; Koleske, D.D.; Jiang, H.X.; Lin, J.Y.; Bajaj, K.K.; Mahajan, S.; Westmeyer, A.N. (American Institute of Physics, 2006-01-09)