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Mg Acceptor Level in InN Epilayers Probed by Photoluminescence

Jiang, H.X.; Lin, J.Y.; Sedhain, A.; Nepal, N.; Khan, N. (American Institute of Physics, 2007-07-02)

Optical Enhancement of Room Temperature Ferromagnetism in Er-Doped GaN Epilayers

Jiang, H.X.; Lin, J.Y.; Sedhain, A.; Ugolini, C.; Dahal, R.; Zavada, J.M.; Nepal, N. (American Institute of Physics, 2009-07-14)

Photoluminescence Properties of AlN Homoepilayers with Different Orientations

Edgar, J.H.; Gu, Z.; Jiang, H.X.; Lin, J.Y.; Al Tahtamouni, T.M.; Nakarmi, M.L.; Nepal, N.; Sedhain, A. (American Institute of Physics, 2008-07-29)

Deep Ultraviolet Photoluminescence of Tm-Doped AlGaN Alloys

Jiang, H.X.; Lin, J.Y.; Sedhain, A.; Steckl, A.J.; Lee, D.S.; Zavada, J.M.; Nepal, N. (American Institute of Physics, 2009-03-16)