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Beryllium Acceptor Binding Energy in AlN

Jiang, H.X.; Lin, J.Y.; Li, J.; Tahtamouni, T.M. Al; Sedhain, A. (American Institute of Physics, 2008-10-07)

High Mobility InN Epilyers Grown on AlN Epilayer Templates

Jiang, H.X.; Lin, J.Y.; Li, J.; Sedhain, A.; Khan, N. (American Institute of Physics, 2008-04-28)

Photoluminescence Properties of AlN Homoepilayers with Different Orientations

Edgar, J.H.; Gu, Z.; Jiang, H.X.; Lin, J.Y.; Al Tahtamouni, T.M.; Nakarmi, M.L.; Nepal, N.; Sedhain, A. (American Institute of Physics, 2008-07-29)

Si-Doped High Al-Content AlGaN Epilayers with Improved Quality and Conductivity Using Indium as a Surfactant

Jiang, H.X.; Lin, J.Y.; Sedhain, A.; Al Tahtamouni, T.M. (American Institute of Physics, 2008-03-04)

Valence Band Structure of AlN Probed by Photoluminescence

Jiang, H.X.; Lin, J.Y.; Sedhain, A. (American Institute of Physics, 2008-01-31)