Recherche
Voici les éléments 1-10 de 18
Enhancing Erbium Emission by Strain Engineering in GaN Heteroepitaxial Layers
(American Institute of Physics, 2010-01-21)
Growth and Photoluminescence Studies of A-Plane AlN/Al_x_Ga_1-x_N
(American Institute of Physics, 2007-05-29)
Mg Acceptor Level in InN Epilayers Probed by Photoluminescence
(American Institute of Physics, 2007-07-02)
Optical Enhancement of Room Temperature Ferromagnetism in Er-Doped GaN Epilayers
(American Institute of Physics, 2009-07-14)
Probing Exciton-Phonon Interaction in AIN Epilayers by Photoluminescence
(American Institute of Physics, 2009-08-14)
Beryllium Acceptor Binding Energy in AlN
(American Institute of Physics, 2008-10-07)
High Mobility InN Epilyers Grown on AlN Epilayer Templates
(American Institute of Physics, 2008-04-28)
Photoluminescence Properties of AlN Homoepilayers with Different Orientations
(American Institute of Physics, 2008-07-29)
Si-Doped High Al-Content AlGaN Epilayers with Improved Quality and Conductivity Using Indium as a Surfactant
(American Institute of Physics, 2008-03-04)
Probing the Relationship Between Structural and Optical Properties of Si-Doped AIN
(American Institute of Physics, 2010-04-01)