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Optical Enhancement of Room Temperature Ferromagnetism in Er-Doped GaN Epilayers

Jiang, H.X.; Lin, J.Y.; Sedhain, A.; Ugolini, C.; Dahal, R.; Zavada, J.M.; Nepal, N. (American Institute of Physics, 2009-07-14)

Erbium -Doped GaN Epilayers Synthesized by Metal-Organic Chemical Vapor Deposition

Zavada, J.M.; Jiang, H.X.; Lin, J.Y.; Nepal, N.; Ugolini, C. (American Institute of Physics, 2006-10-09)

Ultraviolet Photoluminescence from Gd-Implanted AlN Epilyers

Gwilliam, R.; Pearton, S.J.; Abernathy, C.R.; Thaler, G.T.; Hite, J.; Hommerich, U.; Brown, E.; Jiang, H.X.; Lin, J.Y.; Nepal, N.; Zavada, J.M. (American Institute of Physics, 2006-10-10)

Optical and Magnetic Behavior of Erbium-Doped GaN Epilayers by Metal-Organic Chemical Vapor Deposition

Hommerich, U.; Brown, E.E.; Pearton, S.J.; Abernathy, C.R.; Hite, J.; Davies, R.; Jiang, H.X.; Lin, J.Y.; Ugolini, C.; Nepal, N.; Zavada, J.M. (American Institute of Physics, 2007-08-01)

Electroluminescent Properties of Erbium-Doped III-N Light-Emitting Diodes

Hertog, B.; Chow, P.; Jiang, H.X.; Lin, J.Y.; Nepal, N.; Jin, S.X.; Zavada, J.M. (American Institute of Physics, 2004-02-16)

Optical Properties of the Nitrogen Vacancy in AlN Epilayers

Wilson, R.G.; Zavada, J.M.; Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Nam, K.B.; Nepal, N. (American Institute of Physics, 2004-02-16)

Deep Ultraviolet Photoluminescence of Tm-Doped AlGaN Alloys

Jiang, H.X.; Lin, J.Y.; Sedhain, A.; Steckl, A.J.; Lee, D.S.; Zavada, J.M.; Nepal, N. (American Institute of Physics, 2009-03-16)

Excitation Dynamics of the 1.54 Micrometer Emission in Er Doped GaN Synthesized by Metal Organic Chemical Vapor Deposition

Zavada, J.M.; Jiang, H.X.; Lin, J.Y.; Nepal, N.; Ugolini, C. (American Institute of Physics, 2007-02-01)