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Electroluminescent Properties of Erbium-Doped III-N Light-Emitting Diodes

Hertog, B.; Chow, P.; Jiang, H.X.; Lin, J.Y.; Nepal, N.; Jin, S.X.; Zavada, J.M. (American Institute of Physics, 2004-02-16)

Optical Properties of the Nitrogen Vacancy in AlN Epilayers

Wilson, R.G.; Zavada, J.M.; Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Nam, K.B.; Nepal, N. (American Institute of Physics, 2004-02-16)

Acceptor-Bound Exciton Transition in Mg-Doped AlN Epilayers

Jiang, H.X.; Lin, J.Y.; Nam, K.B.; Nakarmi, M.L.; Nepal, N. (American Institute of Physics, 2004-09-20)