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Study of self-heating in GaN/AlGaN Heterostructure FET using visible and ultraviolet micro-raman spectroscopy
(Texas Tech University, 2005-05)
ABSTRACT Due to its large bandgap (3.4 eV), high breakdown field (3 ´ 106 V/cm), and large electron mobility (1500 cm2/V•s), gallium nitride (GaN) has been used to develop heterostructure field effect transistors ...
Information Access Illiterate
(Haworth Press, 2000)
Traditionally, librarians preserved and protected written records for the politically elite and wealthy classes. The Greeks, Romans, and Egyptians built up great libraries many of which were destroyed throughout history. ...