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Transport Properties of Highly Conductive N-type Al-rich Al_x_Ga_1-x_N (x>=0.7)

Jiang, H.X.; Lin, J.Y.; Zhu, K.; Kim, K.H.; Nakarmi, M.L. (American Institute of Physics, 2004-10-25)

Mg Doped Al-Rich AlGaN Alloys for Deep UV Emitters

Jiang, H.X.; Lin, J.Y.; Zhu, K.; Kim, K.H.; Nakarmi, M.L. (SPIE, 2004)

Optical Properties of AlN and GaN in Elevated Temperatures

Jiang, H.X.; Lin, J.Y.; Li, J.; Nam, K.B. (American Institute of Physics, 2004-10-18)

Mechanism of Enhanced Luminescence in In_x_Al_y_Ga_1-x-y_N Quaternary Epilayers

Lin, J.Y.; Jiang, H.X.; Chen, K.H.; Chen, L.C.; Lan, Z.H.; Chen, Y.F.; Chen, C.H. (American Institute of Physics, 2004-03-01)

AlGaN-Based Ultraviolet Light-Emitting Diodes Grown on AlN Epilayers

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Khizar, M.L.; Fan, Z.Y.; Kim, K.H. (American Institute of Physics, 2004-11-15)

Band-Edge Exciton States in AlN Single Crystals and Epitaxial Layers

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Khan, M.A.; Yang, J.; Sun, W.; Chen, C.; Sitar, Z.; Schlesser, R.; Dalmau, R.F.; Skromme, B.J.; Chen, L. (American Institute of Physics, 2004-11-08)

Electroluminescent Properties of Erbium-Doped III-N Light-Emitting Diodes

Hertog, B.; Chow, P.; Jiang, H.X.; Lin, J.Y.; Nepal, N.; Jin, S.X.; Zavada, J.M. (American Institute of Physics, 2004-02-16)

Time-Resolved Electroluminescence Studies of III-Nitride Ultraviolet Photonic-Crystal Light-Emitting Diodes

Jiang, H.X.; Lin, J.Y.; Shakya, J. (American Institute of Physics, 2004-09-13)

Silicon Doping Dependence of Highly Conductive N-type Al_0.7_Ga_0.3_N

Jiang, H.X.; Lin, J.Y.; Kim, K.H.; Nakarmi, M.L.; Zhu, K. (American Institute of Physics, 2004-11-15)

Optical Properties of the Nitrogen Vacancy in AlN Epilayers

Wilson, R.G.; Zavada, J.M.; Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Nam, K.B.; Nepal, N. (American Institute of Physics, 2004-02-16)