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Now showing items 21-30 of 81
Photoluminescence Properties of AlN Homoepilayers with Different Orientations
(American Institute of Physics, 2008-07-29)
Ultraviolet Photoluminescence from Gd-Implanted AlN Epilyers
(American Institute of Physics, 2006-10-10)
Optical and Magnetic Behavior of Erbium-Doped GaN Epilayers by Metal-Organic Chemical Vapor Deposition
(American Institute of Physics, 2007-08-01)
AlGaN-Based Ultraviolet Light-Emitting Diodes Grown on AlN Epilayers
(American Institute of Physics, 2004-11-15)
Band-Edge Exciton States in AlN Single Crystals and Epitaxial Layers
(American Institute of Physics, 2004-11-08)
AlGaN/GaN/AlN Quantum-Well Field-Effect Transistors with Highly Resistive AlN Epilayers
(American Institute of Physics, 2006-02-16)
III-Nitride Nanostructures for Energy Generation
(The International Society for Optics and Photonics, 2010)
Hydrogen Generation by Solar Water Splitting Using P-InGaN Photoelectrochemical Cells
(American Institute of Physics, 2010-02-02)
Deep Ultraviolet Photoluminescence Studies of AlN Photonic Crystals
(American Institute of Physics, 2006-03-29)
Higher Lying Conduction Band in GaN and AlN Probed by Photoluminescence Spectroscopy
(American Institute of Physics, 2006-06-30)