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Now showing items 31-40 of 81

Si-Doped High Al-Content AlGaN Epilayers with Improved Quality and Conductivity Using Indium as a Surfactant

Jiang, H.X.; Lin, J.Y.; Sedhain, A.; Al Tahtamouni, T.M. (American Institute of Physics, 2008-03-04)

Correlation Between Biaxial Stress and Free Exciton Transition in AlN Epilayers

Jiang, H.X.; Lin, J.Y.; Li, J.; Nakarmi, M.L.; Al Tahtamouni, T.M.; Nepal, N.; Pantha, B.N. (American Institute of Physics, 2007-09-20)

Electroluminescent Properties of Erbium-Doped III-N Light-Emitting Diodes

Hertog, B.; Chow, P.; Jiang, H.X.; Lin, J.Y.; Nepal, N.; Jin, S.X.; Zavada, J.M. (American Institute of Physics, 2004-02-16)

Time-Resolved Electroluminescence Studies of III-Nitride Ultraviolet Photonic-Crystal Light-Emitting Diodes

Jiang, H.X.; Lin, J.Y.; Shakya, J. (American Institute of Physics, 2004-09-13)

Thermally Stable Schottky Contacts on N-Type GaN Using ZrB_2_

Isaacs-Smith, T.; Williams, J.R.; Jiang, H.X.; Lin, J.Y.; Martin, P.; Oder, T.N. (American Institute of Physics, 2006-05-04)

Correlation Between Optoelectronic and Structural Properties and Epilayer Thickness of AlN

Weyburne, David; Paduano, Q.S.; Jiang, H.X.; Lin, J.Y.; Li, J.; Nepal, N.; Nakarmi, M.L.; Dahal, R.; Pantha, B.N. (American Institute of Physics, 2007-06-11)

Erbium-Doped GaN Optical Amplifiers Operating at 1.54 Micrometers

Zavada, J.M.; Jiang, H.X.; Lin, J.Y.; Ugolini, C.; Dahal, R. (American Institute of Physics, 2009-09-16)

Growth of III-Nitride Photonic Structures on Large Area Silicon Substrates

Jiang, H.X.; Lin, J.Y.; Li, J. (American Institute of Physics, 2006-04-26)

Exciton Localization in AlGaN Alloys

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Li, J.; Nepal, N. (American Institute of Physics, 2006-02-06)

Hybrid AlN-SiC Deep Ultraviolet Schottky Barrier Photodetectors

Jiang, H.X.; Lin, J.Y.; Fan, Z.Y.; Al Tahtamouni, T.M.; Dahal, R. (American Institute of Physics, 2007-06-26)

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