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Now showing items 31-40 of 81
Si-Doped High Al-Content AlGaN Epilayers with Improved Quality and Conductivity Using Indium as a Surfactant
(American Institute of Physics, 2008-03-04)
Correlation Between Biaxial Stress and Free Exciton Transition in AlN Epilayers
(American Institute of Physics, 2007-09-20)
Electroluminescent Properties of Erbium-Doped III-N Light-Emitting Diodes
(American Institute of Physics, 2004-02-16)
Time-Resolved Electroluminescence Studies of III-Nitride Ultraviolet Photonic-Crystal Light-Emitting Diodes
(American Institute of Physics, 2004-09-13)
Thermally Stable Schottky Contacts on N-Type GaN Using ZrB_2_
(American Institute of Physics, 2006-05-04)
Correlation Between Optoelectronic and Structural Properties and Epilayer Thickness of AlN
(American Institute of Physics, 2007-06-11)
Erbium-Doped GaN Optical Amplifiers Operating at 1.54 Micrometers
(American Institute of Physics, 2009-09-16)
Growth of III-Nitride Photonic Structures on Large Area Silicon Substrates
(American Institute of Physics, 2006-04-26)
Exciton Localization in AlGaN Alloys
(American Institute of Physics, 2006-02-06)
Hybrid AlN-SiC Deep Ultraviolet Schottky Barrier Photodetectors
(American Institute of Physics, 2007-06-26)