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Transport Properties of Highly Conductive N-type Al-rich Al_x_Ga_1-x_N (x>=0.7)
(American Institute of Physics, 2004-10-25)
Mg Doped Al-Rich AlGaN Alloys for Deep UV Emitters
(SPIE, 2004)
Optical Properties of AlN and GaN in Elevated Temperatures
(American Institute of Physics, 2004-10-18)
Mechanism of Enhanced Luminescence in In_x_Al_y_Ga_1-x-y_N Quaternary Epilayers
(American Institute of Physics, 2004-03-01)
AlGaN-Based Ultraviolet Light-Emitting Diodes Grown on AlN Epilayers
(American Institute of Physics, 2004-11-15)
Band-Edge Exciton States in AlN Single Crystals and Epitaxial Layers
(American Institute of Physics, 2004-11-08)
Electroluminescent Properties of Erbium-Doped III-N Light-Emitting Diodes
(American Institute of Physics, 2004-02-16)
Time-Resolved Electroluminescence Studies of III-Nitride Ultraviolet Photonic-Crystal Light-Emitting Diodes
(American Institute of Physics, 2004-09-13)
Silicon Doping Dependence of Highly Conductive N-type Al_0.7_Ga_0.3_N
(American Institute of Physics, 2004-11-15)
Optical Properties of the Nitrogen Vacancy in AlN Epilayers
(American Institute of Physics, 2004-02-16)