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Probing Exciton-Phonon Interaction in AIN Epilayers by Photoluminescence
(American Institute of Physics, 2009-08-14)
AlGaN-Based Ultraviolet Light-Emitting Diodes Grown on AlN Epilayers
(American Institute of Physics, 2004-11-15)
InGaN/GaN Multiple Quantum Well Solar Cells with Long Operating Wavelengths
(American Institute of Physics, 2009-02-10)
Correlation Between Optical and Electrical properties of Mg-doped AlN Epilayers
(American Institute of Physics, 2006-10-13)
Silicon Doping Dependence of Highly Conductive N-type Al_0.7_Ga_0.3_N
(American Institute of Physics, 2004-11-15)
Luminescence Propertes of Erbium Doped InGaN Epilayers
(American Institute of Physics, 2009-07-30)
Temperature-Dependent Photoluminescence and Electron Field Emission Properties of AIN Nanotip Arrays
(American Institute of Physics, 2009-04-28)
Thermoelectric Properties of In_.3_Ga_.7_N Alloys
(TMS, 2009-02-07)
Deep Ultraviolet Photoluminescence of Tm-Doped AlGaN Alloys
(American Institute of Physics, 2009-03-16)