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Probing Exciton-Phonon Interaction in AIN Epilayers by Photoluminescence 

Jiang, H.X.; Lin, J.Y.; Li, J.; Sedhain, A. (American Institute of Physics, 2009-08-14)
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AlGaN-Based Ultraviolet Light-Emitting Diodes Grown on AlN Epilayers 

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Khizar, M.L.; Fan, Z.Y.; Kim, K.H. (American Institute of Physics, 2004-11-15)
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InGaN/GaN Multiple Quantum Well Solar Cells with Long Operating Wavelengths 

Jiang, H.X.; Lin, J.Y.; Li, J.; Pantha, B.; Dahal, R. (American Institute of Physics, 2009-02-10)
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III-Nitride Blue and UV Photonic Crystal Light-Emitting Diodes 

Jiang, H.X.; Lin, J.Y.; Oder, T.N.; Kim, K.H.; Shakya, J. (SPIE, 2004)
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Correlation Between Optical and Electrical properties of Mg-doped AlN Epilayers 

Jiang, H.X.; Lin, J.Y.; Al Tahtamouni, T.M.; Ugolini, C.; Nepal, N.; Nakarmi, M.L. (American Institute of Physics, 2006-10-13)
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Silicon Doping Dependence of Highly Conductive N-type Al_0.7_Ga_0.3_N 

Jiang, H.X.; Lin, J.Y.; Kim, K.H.; Nakarmi, M.L.; Zhu, K. (American Institute of Physics, 2004-11-15)
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Luminescence Propertes of Erbium Doped InGaN Epilayers 

Jiang, H.X.; Lin, J.Y.; Ugolini, C.; Zavada, J.M.; Sedhain, A. (American Institute of Physics, 2009-07-30)
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Temperature-Dependent Photoluminescence and Electron Field Emission Properties of AIN Nanotip Arrays 

Lin, J.Y.; Jiang, H.X.; Lau, S.P.; Zhang, Q.Y.; Ji, X.H. (American Institute of Physics, 2009-04-28)
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Thermoelectric Properties of In_.3_Ga_.7_N Alloys 

Pomrenke, G.; Jiang, H.X.; Lin, J.Y.; Li, J.; Dahal, R.; Pantha, B.N. (TMS, 2009-02-07)
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Deep Ultraviolet Photoluminescence of Tm-Doped AlGaN Alloys 

Jiang, H.X.; Lin, J.Y.; Sedhain, A.; Steckl, A.J.; Lee, D.S.; Zavada, J.M.; Nepal, N. (American Institute of Physics, 2009-03-16)
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Lin, J.Y. (80)
Jiang, H.X. (79)Li, J. (27)Nakarmi, M.L. (23)Nepal, N. (22)Sedhain, A. (17)Dahal, R. (15)Pantha, B.N. (11)Zavada, J.M. (11)Kim, K.H. (10)... View MoreDate Issued2004 (16)2006 (14)2009 (13)2008 (12)2007 (11)2010 (7)2005 (6)2011 (1)Has File(s)
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