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Study of self-heating in GaN/AlGaN Heterostructure FET using visible and ultraviolet micro-raman spectroscopy
(Texas Tech University, 2005-05)
ABSTRACT
Due to its large bandgap (3.4 eV), high breakdown field (3 ´ 106 V/cm), and large electron mobility (1500 cm2/V•s), gallium nitride (GaN) has been used to develop heterostructure field effect transistors ...