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dc.creatorDu, Xiaozhang
dc.date.accessioned2018-09-04T18:07:06Z
dc.date.available2018-09-04T18:07:06Z
dc.date.created2018-08
dc.date.issued2018-08
dc.date.submittedAugust 2018
dc.identifier.urihttp://hdl.handle.net/2346/74370
dc.description.abstractThis dissertation reveals the origins of deep-impurity and near band-edge optical transitions in h-BN, the temperature and layer number dependence of energy band gap of multiple-layer h-BN, and the temperature dependence of energy bandgap of boron nitride nanotubes.
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.subjectPhotoluminescence
dc.subjectHexagonal boron nitride
dc.titleOptical study on hexagonal boron nitride
dc.typeDissertation
dc.date.updated2018-09-04T18:07:06Z
dc.type.materialtext
thesis.degree.nameDoctor of Philosophy
thesis.degree.levelDoctoral
thesis.degree.disciplineElectrical Engineering
thesis.degree.grantorTexas Tech University
thesis.degree.departmentElectrical and Computer Engineering
dc.contributor.committeeMemberLi, Jing
dc.contributor.committeeMemberHe, Rui
dc.contributor.committeeChairJiang, Hongxing
dc.contributor.committeeChairLi, Jingyu
dc.rights.availabilityUnrestricted.


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