Simulation study of HEMT structures with HfO2 cap layer for mitigating inverse piezoelectric effect related device failures
Date
2015
Journal Title
Journal ISSN
Volume Title
Publisher
AIP
Abstract
The Inverse Piezoelectric Effect (IPE) is thought to contribute to possible device failure of GaN High Electron Mobility Transistors (HEMTs). Here we focus on a simulation study to probe the possible mitigation of the IPE by reducing the internal electric fields and related elastic energy through the use of high-k materials. Inclusion of a HfO2 “cap layer” above the AlGaN barrier particularly with a partial mesa structure is shown to have potential advantages. Simulations reveal even greater reductions in the internal electric fields by using “field plates” in concert with high-k oxides.
Description
Copyright 2015 Nagulapally, Joshi, and Pradhan. This article is distributed under a Creative Commons Attribution (CC BY) License.
Keywords
Metal Oxides, Elastic Energy, Piezoelectricity, Computer Simulation, Electrical Properties and Parameters, Electrostatics, Chemical Elements, Transconductance, Dielectric Properties, Field Effect Transistors
Citation
D. Naulapally, R.P. Joshi, and A.K. Pradhan, “ Simulation study of HEMT structures with HfO2 cap layer for mitigating inverse piezoelectric effect related device failures,” AIP Advances 5, 017103 (2015). https://doi.org/10.1063/1.4905702