Robustness evaluation of SiC MOSFETs
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Three tests were done to evaluate the robustness of 1200 V SiC MOSFETs. These tests were short circuit, di/dt, and avalanche breakdown. Short circuit was done to determine the amount of short circuit energy it takes to degrade or fail the device. Short circuit withstand time values were also collected to determine how long the device can undergo a short circuit. Di/dt testing was done to determine how fast the device can switch on without introducing too much noise in the gate voltage waveform that would interfere with the device switching. Avalanche breakdown testing was done to determine the maximum amount of energy the device can handle before breakdown.Embargo status: Restricted to TTU community only. To view, login with your eRaider (top right). Others may request access exception by clicking on the PDF link to the left.