Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes
Date
2014
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Abstract
Mg-doped AlN/AlGaN superlattice (Mg-SL) and Mg-doped AlGaN epilayers have been investigated in the 284 nm deep ultraviolet (DUV) light emitting diodes (LEDs) as electron blocking layers. It was found that the use of Mg-SL improved the material quality of the p-GaN contact layer, as evidenced in the decreased density of surface pits and improved surface morphology and crystalline quality. The performance of the DUV LEDs fabricated using Mg-SL was significantly improved, as manifested by enhanced light intensity and output power, and reduced turn-on voltage. The improved performance is attributed to the enhanced blocking of electron overflow, and enhanced hole injection.
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© 2014 Author(s). cc-by
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Citation
Al, Tahtamouni, T.M., Lin, J.Y., & Jiang, H.X.. 2014. Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes. AIP Advances, 4(4). https://doi.org/10.1063/1.4871996