Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

Abstract

The layer structured hexagonal boron nitride carbon semiconductor alloys, h-(BN)C, offer the unique abilities of bandgap engineering (from 0 for graphite to ∼6.4 eV for h-BN) and electrical conductivity control (from semi-metal for graphite to insulator for undoped h-BN) through alloying and have the potential to complement III-nitride wide bandgap semiconductors and carbon based nanostructured materials. Epilayers of (BN)-rich h-(BN)<inf>1-x</inf>(C <inf>2</inf>)<inf>x</inf> alloys were synthesized by metal-organic chemical vapor deposition (MOCVD) on (0001) sapphire substrates. Hall-effect measurements revealed that homogeneous (BN)-rich h-(BN)<inf>1-x</inf>(C<inf>2</inf>) <inf>x</inf> alloys are naturally n-type. For alloys with x = 0.032, an electron mobility of about 20 cm²/Vs at 650°K was measured. X-ray photoelectron spectroscopy (XPS) was used to determine the chemical composition and analyze chemical bonding states. Both composition and chemical bonding analysis confirm the formation of alloys. XPS results indicate that the carbon concentration in the alloys increases almost linearly with the flow rate of the carbon precursor (propane (C<inf>3</inf>H<inf>8</inf>)) employed during the epilayer growth. XPS chemical bonding analysis showed that these MOCVD grown alloys possess more C-N bonds than C-B bonds, which possibly renders the undoped h-(BN)<inf>1-x</inf>(C<inf>2</inf>)<inf>x</inf> alloys n-type and corroborates the Hall-effect measurement results. © 2014 Author(s).