Si-Doped High Al-Content AlGaN Epilayers with Improved Quality and Conductivity Using Indium as a Surfactant
Files
Date
2008-03-04
Authors
Jiang, H.X.
Lin, J.Y.
Sedhain, A.
Al Tahtamouni, T.M.
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics