Assessing the role of trap-to-band impact ionization and hole transport on the dark currents of 4H-SiC photoconductive switches containing deep defects

dc.creatorChowdhury, A.R.
dc.creatorDickens, J.C.
dc.creatorNeuber, A.A.
dc.creatorJoshi, R.P.
dc.date.accessioned2021-04-29T19:50:43Z
dc.date.available2021-04-29T19:50:43Z
dc.date.issued2016
dc.descriptionThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.en_US
dc.description.abstractSimulation studies of the electrical response characteristics of 4H-SiC switches containing traps are reported in the absence of photoexcitation. The focus is on trap-to-band impact ionization and the role of hole injection from the anode. Simulations show that hole-initiated ionization can be more important than the electron-initiated process. The results also underscore the role of hole injection at the high applied voltages. Our one-dimensional, time-dependent model yielded reasonable agreement with measured current-voltage data spanning over three orders of magnitude, but only when impact ionization was taken into account. Finally, the simulations predicted undulations in the device conduction current density with respect to time, due to the dynamic interplay between impact ionization, spatial electric field values, and occupancies of the trap levels.en_US
dc.identifier.citationA. R. Chowdhury, J. C. Dickens, A. A. Neuber, and R. P. Joshi, "Assessing the Role of Trap-to-Band Impact Ionization and Hole Transport on the Dark Currents of 4H-SiC Photoconductive Switches Containing Deep Defects," Journ. Appl. Phys. 120, 245705 (2016). https://doi.org/10.1063/1.4972968en_US
dc.identifier.urihttps://doi.org/10.1063/1.4972968
dc.identifier.urihttps://hdl.handle.net/2346/86913
dc.language.isoengen_US
dc.publisherAIPen_US
dc.subjectMonte Carlo Methodsen_US
dc.subjectIonization Processesen_US
dc.subjectPhotoexcitationsen_US
dc.subjectComputer Simulationen_US
dc.subjectElectronic Transporten_US
dc.subjectElectrical Properties and Parametersen_US
dc.subjectElectric Currentsen_US
dc.subjectElectronic Band Structureen_US
dc.subjectPhotoconductive Switchen_US
dc.subjectPower Electronicsen_US
dc.titleAssessing the role of trap-to-band impact ionization and hole transport on the dark currents of 4H-SiC photoconductive switches containing deep defectsen_US
dc.typeArticleen_US

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